2024-06 |
Asymmetric and Double-Layered Gate-All- Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement |
IEEE Transactions on Electron Devices
|
2023-09 |
TFET-Based Pixel Source Follower of CMOS Image Sensor for Improved Linearity and High Signal-to-Noise Ratio |
IEEE Sensors Journal
|
2023-04 |
Methodology for Plasma Diagnosis and Accurate Virtual Measurement Modeling using Optical Emission Spectroscopy |
IEEE Sensors Journal
|
2023-03 |
Design Risk for Fabrication Stability of Silicon Single-Photon Avalanche Diodes with Deep N-well Implantation |
Proceedings of SPIE - The International Society for Optical Engineering
|
2022-09 |
Junction Engineering-Based Modeling and Optimization of Deep Junction Silicon Single-Photon Avalanche Diodes for Device Scaling |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
2022-03 |
Evaluation of the Long-Term Reliability of Open-Tube Diffused Planar InGaAs/InP Avalanche Photodiodes under a Hybrid of Thermal and Electrical Stresses |
ELECTRONICS
|
2021-11 |
2-D Quantum Confined Threshold Voltage Shift Model for Asymmetric Short-Channel Junctionless Quadruple-Gate FETs |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
2021-10 |
Optimization of Self-Heating Driven Leakage Current Properties of Gate-All-Around Field-Effect Transistors Using Neural Network Modeling and Genetic Algorithm |
ELECTRONICS
|
2021-01 |
Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy |
IEEE SENSORS JOURNAL
|
2020-12 |
Unified compact model for junctionless multiple-gate FETs including source/drain extension regions |
PHYSICA SCRIPTA
|
2020-04 |
Degradation of Off-Phase Leakage Current of FinFETs and Gate-All-Around FETs Induced by the Self-Heating Effect in the High-Frequency Operation Regime |
IEEE TRANSACTIONS ON NANOTECHNOLOGY
|
2020-03 |
Impact of process variability in junctionless FinFETs due to random dopant fluctuation, gate work function variation, and oxide thickness variation |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
2020-02 |
Model-based guard ring structure guideline for the enhancement of silicon-based single-photon avalanche diode characteristics |
Proceedings of SPIE - The International Society for Optical Engineering
|
2019-07 |
The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
2019-06 |
Compact modeling of the subthreshold characteristics of junctionless double-gate FETs including the source/drain extension regions |
SOLID-STATE ELECTRONICS
|
2019-03 |
Real-Time Plasma Uniformity Measurement Technique Using Optical Emission Spectroscopy With Revolving Module |
IEEE SENSORS JOURNAL
|
2018-11 |
Thermal modeling of 7nm node bulk fin-shaped field-effect transistors for device structure-aware design |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
2018-08 |
Real-time plasma monitoring technique using incident-angle-dependent optical emission spectroscopy for computer-integrated manufacturing |
ROBOTICS AND COMPUTER-INTEGRATED MANUFACTURING
|
2018-05 |
Universal core model for multiple-gate fielde-effect transistors with short channel and quantum mechanical effects |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
2017-09 |
Effect of selectively passivated layer on foldable low temperature polycrystalline silicon thin film transistor characteristics under dynamic mechanical stress |
MICROELECTRONICS RELIABILITY
|
2017-09 |
Structure variation effects on device reliability of single photon avalanche diodes |
MICROELECTRONICS RELIABILITY
|
2017-09 |
Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation |
MICROELECTRONICS RELIABILITY
|
2017-07 |
Effects of mechanical stresses on the reliability of low-temperature polycrystalline silicon thin film transistors for foldable displays |
SOLID-STATE ELECTRONICS
|
2017-04 |
Analytical Model for Junctionless Double-Gate FET in Subthreshold Region |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
2017-01 |
Degradation Mechanisms of Amorphous InGaZnO Thin-Film Transistors Used in Foldable Displays by Dynamic Mechanical Stress |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
2016-12 |
Analytical model for random dopant fluctuation in double-gate MOSFET in the subthreshold region using macroscopic modeling method |
SOLID-STATE ELECTRONICS
|
2016-09 |
Crack-guided effect on dynamic mechanical stress for foldable low temperature polycrystalline silicon thin film transistors |
MICROELECTRONICS RELIABILITY
|
2016-09 |
Instability of oxide thin film transistor under electrical?mechanical hybrid stress for foldable display |
MICROELECTRONICS RELIABILITY
|
2016-09 |
Plasma Process Uniformity Diagnosis Technique Using Optical Emission Spectroscopy With Spatially Resolved Ring Lens |
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS
|
2016-06 |
Analytical model for an asymmetric double-gate MOSFET with gate-oxide thickness and flat-band voltage variations in the subthreshold region |
SOLID-STATE ELECTRONICS
|
2015-09 |
Reliability modeling and analysis of flicker noise for pore structure in amorphous chalcogenide-based phase-change memory devices |
MICROELECTRONICS RELIABILITY
|
2015-09 |
Design of red-emitting external cavity diode laser module for high-slope efficiency and narrow bandwidth |
OPTICAL ENGINEERING
|
2015-09 |
Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory |
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
|
2015-09 |
Characterization of HfOxNythin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas |
APPLIED SURFACE SCIENCE
|
2015-06 |
Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors |
CURRENT APPLIED PHYSICS
|
2015-04 |
Effect of electric field polarity on inter-poly dielectric during cell operation for the retention characteristics |
MICROELECTRONICS RELIABILITY
|
2015-03 |
UV-Cured Reactive Mesogen-YInZnO Hybrid Materials as Semiconducting Channels in Thin-Film Transistors Using a Solution-Process |
ECS SOLID STATE LETTERS
|
2015-01 |
Electrical characteristics of metal catalyst-assisted etched rough silicon nanowire depending on the diameter size |
ACS APPLIED MATERIALS & INTERFACES
|
2015-01 |
An analytical avalanche breakdown model for double gate MOSFET |
MICROELECTRONICS RELIABILITY
|
2014-11 |
실패에 관한 다양한 관점과 공학교육에서의 함의 |
공학교육연구
|
2014-11 |
A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor |
JOURNAL OF APPLIED PHYSICS
|
2014-11 |
Conduction instability of amorphous InGaZnO thin-film transistors under constant drain current stress |
MICROELECTRONICS RELIABILITY
|
2014-04 |
Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications |
SOLID-STATE ELECTRONICS
|
2013-10 |
Methodology for Improvement of Data Retention in Floating Gate Flash Memory using Leakage Current Estimation |
MICROELECTRONICS RELIABILITY
|
2013-09 |
Predictive modeling and analysis of HfO2 thin film process based on Bayesian information criterion using PCA-based neural networks |
SURFACE AND INTERFACE ANALYSIS
|
2013-08 |
Instability of light illumination stress on amorphous In-Ga-Zn-O thin-film transistors |
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
|
2013-06 |
Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. II. Continuous drain current model from subthreshold to inversion region |
JOURNAL OF APPLIED PHYSICS
|
2013-06 |
Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics |
JOURNAL OF APPLIED PHYSICS
|
2013-06 |
Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment |
APPLIED PHYSICS LETTERS
|
2013-06 |
Device characteristics of Ti-InSnO thin film transistors with modulated double and triple channel structures |
THIN SOLID FILMS
|
2013-05 |
Channel Length-Dependent Charge Detrapping on Threshold Voltage Shift of Amorphous InGaZnO TFTs Under Dynamic Bias Stress |
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
2012-12 |
Device characteristics of InSnO thin-film transistors with a modulated channel |
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
|
2012-11 |
Spectroscopic ellipsometry modeling of ZnO thin films with various O2 partial pressures |
Current Applied Physics
|
2012-09 |
Threshold voltage shift prediction for gate bias stress on amorphous InGaZnO thin film transistors |
MICROELECTRONICS RELIABILITY
|
2012-09 |
Experimental observation of gate geometry dependent characteristic degradations of the multi-finger MOSFETs |
MICROELECTRONICS RELIABILITY
|
2012-09 |
Investigation on the relationship between channel resistance and subgap density of states of amorphous InGaZnO thin film transistors |
SOLID-STATE ELECTRONICS
|
2012-08 |
Modeling and optimization of ITO/Al/ITO multilayer films characteristics using neural network and genetic algorithm |
Expert Systems with Applications
|
2012-01 |
공학 분야의 윤리적 문제해결방법: 매트릭스 가이드 |
공학교육연구
|
2012-01 |
Effects of nitrogen doping on device characteristics of InSnO thin film transistor |
APPLIED PHYSICS LETTERS
|
2012-01 |
Effects of the interfacial layer on electrical characteristics of Al2O3/TiO2/Al2O3 thin films for gate dielectrics |
APPLIED SURFACE SCIENCE
|
2011-09 |
Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors |
MICROELECTRONICS RELIABILITY
|
2011-08 |
Si/Si(1-x)Ge(x)/Si Heterojunction PIN Nanowires Fabricated by Using an Aqueous Electroless Etching Method |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
2011-07 |
Contact resistance dependent scaling-down behavior of amorphous InGaZnO thin-film transistors |
Current Applied Physics
|
2011-03 |
Effects of Electrical Characteristics on the Non-Rectangular Gate Structure Variations for the Multifinger MOSFETs |
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY
|
2011-03 |
Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors |
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
|
2011-03 |
Process estimation and optimized recipes of ZnO:Ga thin film characteristics for transparent electrode applications |
Expert Systems with Applications
|
2011-01 |
One-Dimensional Semiconductor Nanostructure Based Thin-Film Partial Composite Formed by Transfer Implantation for High-Performance Flexible and Printable Electronics at Low Temperature |
ACS Nano
|
2010-10 |
Density-of-States Modeling of Solution-Processed InGaZnO Thin-Film Transistors |
IEEE ELECTRON DEVICE LETTERS
|
2010-09 |
Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films |
Thin Solid Films
|
2010-07 |
Optical bandgap modeling of thermal annealed ZnO:Ga thin films using neural networks |
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
|
2010-06 |
글로벌 공학인재 양성을 위한 영어강의의 역할과 과제 |
공학교육연구
|
2010-05 |
Fabrication of rough Al doped ZnO films deposited by low pressure chemical vapor deposition for high efficiency thin film solar cells |
Current Applied Physics
|
2009-11 |
Modeling of In2O3-10 wt% ZnO thin film properties for transparent conductive oxide using neural networks |
Current Applied Physics
|
2009-09 |
Photoluminescence study of InGaN/GaN multiple-quantum-well with Si-doped InGaN electron-emitting Layer |
Current Applied Physics
|
2009-07 |
Optical Properties of Self-assembled InAs Quantum-dot Superluminescent Diodes |
Journal Of The Korean Physical Society
|
2009-03 |
Modeling and optimization of the growth rate for ZnO thin films using neural networks and genetic algorithms |
Expert Systems With Applications
|
2009-01 |
Reliability assessment of 1.55-mu m vertical cavity surface emitting lasers with tunnel junction using high-temperature aging tests |
Microelectronics Reliability
|
2008-12 |
Investigation of cell gap on the polymer using statistical modelling for flexible liquid crystalsubstrates display applications |
INTERNATIONAL JOURNAL OF NANOMANUFACTURING
|
2008-10 |
Neural network modeling of the cellgap process for liquid crystal display fabricated on plastic substrates |
Expert Systems With Applications
|
2008-09 |
Optical Characteristics of CdSe Quantum Dots Depending on Growth Conditions and Surface Passivation |
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
|
2008-07 |
Statistical modeling of the electrical characteristics for HfO2 thin films grown by MOMBE for high-k dielectric applications |
Journal Of Materials Processing Technology
|
2008-06 |
Fabrication and optical properties of CdSe/ZnS core/shell quantum-dot multilayer film and hybrid organic/inorganic light-emitting diodes fabricated by using layer-by-layer assembly |
Journal Of The Korean Physical Society
|
2007-10 |
Near-field scanning optical microscopy of quantum dot broad area laser diodes |
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
|
2007-10 |
Size distribution effects on self-assembled InAs quantum dots |
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
|
2007-04 |
Process Effect on the RMS Roughness of HfO2 Thin Films Grown by MOMBE |
Transactions on Electrical and Electronic Materials
|
2007-03 |
High potential barrier effects on self-assembled InAs quantum dots |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
2007-03 |
Near-field emission properties of a self-formed InAs quantum dot laser diode by using near-field scanning optical microscopy |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
2007-03 |
The optical characteristics of epitaxial lateral and vertical overgrowth of GaN on stripe-patterned Si substrate |
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
|
2007-02 |
Neural network based modeling of HfO2 thin film characteristics using Latin Hypercube Sampling |
EXPERT SYSTEMS WITH APPLICATIONS
|
2007-01 |
Degradation analysis in asymmetric sampled grating distributed feedback laser diodes |
MICROELECTRONICS JOURNAL
|
2006-09 |
Experimental observation of the post-annealing effect on the dark current of InGaAs waveguide photodiodes |
SOLID-STATE ELECTRONICS
|
2006-09 |
Statistical modeling of pretilt angle generation for nematic liquid crystal using in situ photoalignment method on treated plastic substrate |
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
|
2006-08 |
Comparison of Latin Hypercube Sampling and Simple Random Sampling Applied to Neural Network Modeling of HfO2 Thin Film Fabrication |
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS
|
2006-08 |
Modeling O/E characteristics of 40-Gb/s InGaAs side-illuminated waveguide photodiode submodule for optical receivers |
IEEE TRANSACTIONS ON ADVANCED PACKAGING
|